BSO615N
MOSFET 2N-CH 60V 2.6A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies SIPMOS® BSO615N is a 2 N-channel MOSFET array designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 2.6A at 25°C. The optimized Rds(On) of 150mOhm at 2.6A and 4.5V Vgs, coupled with a Logic Level Gate, ensures low conduction losses and compatibility with lower voltage control signals. With a maximum power dissipation of 2W and a low Gate Charge (Qg) of 20nC, this component is suitable for high-frequency switching. The BSO615N is housed in an 8-SOIC (PG-DSO-8) package for surface mounting and operates across a wide temperature range of -55°C to 150°C. This component finds application in automotive power management, industrial control, and consumer electronics.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 2.6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-DSO-8 |
Request a Quote
Clients Also Buy
BSS84PH6327XTSA2
MOSFET P-CH 60V 170MA SOT23-3
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
BSS83PH6327XTSA1
MOSFET P-CH 60V 330MA SOT23-3
