BSO615CT
MOSFET N/P-CH 60V 3.1A/2A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies BSO615CT is a SIPMOS® MOSFET array featuring N and P-channel configurations. This component offers a 60V drain-to-source voltage and continuous drain currents of 3.1A for the N-channel and 2A for the P-channel, respectively. Designed with logic level gate operation, it exhibits a maximum on-resistance of 110mOhm at 3.1A and 10V Vgs. The device is housed in an 8-DSO (PG-DSO-8) package, suitable for surface mounting and supplied on tape and reel. Key electrical characteristics include a maximum power dissipation of 2W, input capacitance of 380pF at 25V, and gate charge of 22.5nC at 10V. Operating temperature ranges from -55°C to 150°C. This MOSFET array finds application in automotive and industrial power management systems.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A, 2A |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 3.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 22.5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-DSO-8 |
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