BSO615CGXUMA1
MOSFET N/P-CH 60V 3.1A/2A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies BSO615CGXUMA1 is a SIPMOS® MOSFET array featuring N-channel and P-channel configurations in a PG-DSO-8 package. This surface mount device offers a Drain to Source Voltage (Vdss) of 60V. The N-channel MOSFET provides a continuous drain current (Id) of 3.1A (Ta) at 25°C with a maximum Rds On of 110mOhm at 3.1A, 10V, while the P-channel MOSFET supports 2A (Ta) with a maximum Rds On of 300mOhm at 2A, 10V. Key parameters include a gate charge (Qg) of 22.5nC (N-ch) and 20nC (P-ch) at 10V, and input capacitance (Ciss) of 380pF (N-ch) and 460pF (P-ch) at 25V. The component features a logic level gate and a maximum power dissipation of 2W (Ta). Operating temperature ranges from -55°C to 150°C (TJ). This MOSFET array is suitable for applications in automotive and industrial sectors. Packaging is provided on a Tape & Reel (TR).
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W (Ta) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Ta), 2A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V, 460pF @ 25V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 22.5nC @ 10V, 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 20µA, 2V @ 450µA |
| Supplier Device Package | PG-DSO-8 |
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