BSO615CGHUMA1
MOSFET N/P-CH 60V 3.1A/2A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies SIPMOS® BSO615CGHUMA1 is a MOSFET array featuring N-channel and P-channel configurations. This component offers a drain-source voltage (Vdss) of 60V with continuous drain currents of 3.1A for the N-channel and 2A for the P-channel at 25°C. The device is designed with a logic level gate, a maximum power dissipation of 2W, and a low on-resistance (Rds On) of 110mOhm at 3.1A and 10V. Key parameters include gate charge (Qg) of 22.5nC at 10V and input capacitance (Ciss) of 380pF at 25V. The BSO615CGHUMA1 utilizes surface mount technology in a PG-DSO-8 package, commonly supplied on tape and reel. It operates within a temperature range of -55°C to 150°C. This component is suitable for applications in automotive and industrial sectors requiring efficient power switching.
Additional Information
Series: SIPMOS®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A, 2A |
| Input Capacitance (Ciss) (Max) @ Vds | 380pF @ 25V |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 3.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 22.5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-DSO-8 |
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