BSO612CVGHUMA1
MOSFET N/P-CH 60V 3A/2A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies BSO612CVGHUMA1 is a SIPMOS® MOSFET array featuring complementary N-channel and P-channel devices. This component is housed in an 8-pin PG-DSO-8 package suitable for surface mounting. The N-channel MOSFET exhibits a continuous drain current (Id) of 3A at 25°C with a drain-source voltage (Vdss) of 60V, and a typical Rds(On) of 120mOhm at 3A, 10V. The P-channel MOSFET offers a continuous drain current (Id) of 2A at 25°C under similar voltage conditions, with an Rds(On) of 120mOhm at 2A, 10V. Key electrical characteristics include a gate charge (Qg) of 15.5nC (max) and input capacitance (Ciss) of 340pF (max). Operating across a temperature range of -55°C to 150°C, this MOSFET array is suitable for applications in automotive and industrial power management. The device delivers a maximum power dissipation of 2W.
Additional Information
Series: SIPMOS®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3A, 2A |
| Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 25V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15.5nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Supplier Device Package | PG-DSO-8 |
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