BSO612CV
MOSFET N/P-CH 60V 3A/2A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies SIPMOS® MOSFET Array, part number BSO612CV, features an N-channel and P-channel configuration within an 8-pin PG-DSO-8 package. This surface-mount device offers a Drain-to-Source Voltage (Vdss) of 60V with continuous drain currents of 3A for the N-channel and 2A for the P-channel, respectively, at 25°C. The array exhibits a maximum on-resistance of 120mOhm at 3A and 10V gate-source voltage. Key parameters include a maximum power dissipation of 2W and a gate charge of 15.5nC at 10V. The BSO612CV is suitable for applications in automotive and industrial sectors. It is supplied in Tape & Reel packaging. Operating temperature range is -55°C to 150°C.
Additional Information
Series: SIPMOS®RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3A, 2A |
| Input Capacitance (Ciss) (Max) @ Vds | 340pF @ 25V |
| Rds On (Max) @ Id, Vgs | 120mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15.5nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 20µA |
| Supplier Device Package | PG-DSO-8 |
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