BSO604NS2XUMA1
MOSFET 2N-CH 55V 5A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies OptiMOS™ BSO604NS2XUMA1 is a 2 N-channel MOSFET array featuring a 55V drain-source breakdown voltage and a continuous drain current capability of 5A at 25°C. This device is constructed using advanced MOSFET technology, offering a low on-resistance of 35mOhm maximum at 2.5A and 10V Vgs. The BSO604NS2XUMA1 utilizes a logic level gate for enhanced drive capability and exhibits a gate charge of 26nC maximum at 10V. With a maximum power dissipation of 2W and an operating temperature range of -55°C to 150°C, this component is suitable for surface mount applications. The package type is PG-DSO-8, commonly referred to as 8-SOIC. It is supplied in Tape & Reel (TR) packaging. This MOSFET array finds application in power management and automotive systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 25V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 2.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 26nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 30µA |
| Supplier Device Package | PG-DSO-8 |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
