BSO4804HUMA2
MOSFET 2N-CH 30V 8A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies BSO4804HUMA2 is a dual N-channel MOSFET array designed for high-density power applications. This component features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 8A per channel at 25°C. The low on-resistance of 20mOhm at 8A and 10V (Vgs) ensures efficient power transfer. The MOSFET array operates with a logic level gate, simplifying drive requirements. Key parameters include a maximum gate charge (Qg) of 17nC at 5V and an input capacitance (Ciss) of 870pF at 25V.
The BSO4804HUMA2 is housed in a PG-DSO-8 package, a standard 8-SOIC surface mount configuration with a 3.90mm width. It offers a power dissipation of 2W and operates across a wide temperature range of -55°C to 150°C. This component is suitable for automotive and industrial applications requiring robust power switching. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 25V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 30µA |
| Supplier Device Package | PG-DSO-8 |
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