BSO4804
MOSFET 2N-CH 30V 8A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ BSO4804 is a dual N-channel Power MOSFET featuring 30V drain-source voltage and 8A continuous drain current at 25°C. This device is engineered with a logic level gate, requiring a 5V Vgs for optimal performance, and exhibits a typical gate charge of 17nC. The BSO4804 boasts a low on-resistance of 20mOhms maximum at 8A and 10V Vgs. With a maximum power dissipation of 2W and a low input capacitance of 870pF at 25V, it is suitable for high-efficiency switching applications. The component is housed in an 8-SOIC (PG-DSO-8) surface mount package and operates across a temperature range of -55°C to 150°C. This MOSFET array is commonly utilized in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 870pF @ 25V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 30µA |
| Supplier Device Package | PG-DSO-8 |
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