BSO350N03
MOSFET 2N-CH 30V 5A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies BSO350N03 is a dual N-channel MOSFET array from the OptiMOS™ series, packaged in a PG-DSO-8. This surface mount component offers a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5A at 25°C. Featuring a logic level gate, it exhibits a low on-resistance (Rds On) of 35mOhm maximum at 6A and 10V. The device has a maximum power dissipation of 1.4W and an operating temperature range of -55°C to 150°C. Key parameters include a gate charge (Qg) of 3.7nC maximum at 5V and input capacitance (Ciss) of 480pF maximum at 15V. This MOSFET array is suitable for applications in automotive and industrial power management.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 15V |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.7nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 6µA |
| Supplier Device Package | PG-DSO-8 |
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