BSO330N02KGFUMA1
MOSFET 2N-CH 20V 5.4A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies OptiMOS™ BSO330N02KGFUMA1 is a dual N-channel MOSFET array designed for demanding applications. This 20V device features a continuous drain current capability of 5.4A at 25°C and a low on-resistance of 30mOhm maximum at 6.5A, 4.5V. The logic-level gate simplifies drive requirements. With a maximum power dissipation of 1.4W and a wide operating temperature range of -55°C to 150°C, it is suitable for power management solutions in automotive and industrial sectors. The component is housed in a PG-DSO-8 package, supplied in tape and reel. Key parameters include a gate charge of 4.9nC at 4.5V and input capacitance of 730pF at 10V.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 730pF @ 10V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4.9nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 20µA |
| Supplier Device Package | PG-DSO-8 |