BSO303PNTMA1
MOSFET 2P-CH 30V 8.2A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ BSO303PNTMA1 is a dual P-channel MOSFET array designed for efficient power management applications. This 30V device features a continuous drain current capability of 8.2A per channel at 25°C and a low on-resistance of 21mOhm at 8.2A and 10V Vgs. The MOSFET array utilizes a logic-level gate for enhanced compatibility with lower voltage control signals. Key parameters include a maximum power dissipation of 2W and a gate charge of 72.5nC at 10V. The input capacitance is rated at 1761pF at 25V. This component is supplied in a PG-DSO-8 package, suitable for surface mounting, and is delivered on tape and reel. The operating temperature range is -55°C to 150°C. This device is commonly employed in automotive systems, industrial power supplies, and consumer electronics.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 1761pF @ 25V |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 8.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 72.5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 100µA |
| Supplier Device Package | PG-DSO-8 |
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