BSO303PHXUMA1
MOSFET 2P-CH 30V 7A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ BSO303PHXUMA1 is a dual P-channel MOSFET array in a PG-DSO-8 package, suitable for surface mounting. This component offers a 30V drain-source voltage and a continuous drain current of 7A at 25°C. Featuring logic-level gate drive, it presents a maximum on-resistance of 21mOhm at 8.2A and 10V. Key parameters include a maximum gate charge of 49nC at 10V and input capacitance of 2678pF at 25V. The device is rated for 2W maximum power dissipation and operates across a temperature range of -55°C to 150°C. This MOSFET array is commonly utilized in automotive, industrial, and consumer electronics applications demanding efficient power switching. It is supplied on tape and reel.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 2678pF @ 25V |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 8.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 49nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 100µA |
| Supplier Device Package | PG-DSO-8 |
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