BSO211PHXUMA1
MOSFET 2P-CH 20V 4A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies OptiMOS™ BSO211PHXUMA1 is a dual P-channel MOSFET array in a PG-DSO-8 package, suitable for surface mounting. This device offers a 20V drain-source voltage and a continuous drain current of 4A at 25°C, with a maximum power dissipation of 1.6W. Key electrical parameters include a maximum Rds(On) of 67mOhm at 4.6A and 4.5V Vgs, a gate charge of 10nC at 4.5V, and an input capacitance of 1095pF at 15V. The MOSFET features a logic-level gate drive and an operating temperature range of -55°C to 150°C. This component is commonly utilized in automotive and industrial applications requiring efficient power switching. It is supplied in tape and reel packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.6W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Input Capacitance (Ciss) (Max) @ Vds | 1095pF @ 15V |
| Rds On (Max) @ Id, Vgs | 67mOhm @ 4.6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 25µA |
| Supplier Device Package | PG-DSO-8 |
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