BSO207PNTMA1
MOSFET 2P-CH 20V 5.7A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ BSO207PNTMA1 is a dual P-channel MOSFET array designed for demanding applications. This 20V device offers a continuous drain current of 5.7A at 25°C and a low on-resistance of 45mOhm at 5.7A and 4.5V Vgs. Featuring logic-level gate drive, it is housed in a compact 8-DSO (PG-DSO-8) package suitable for surface mounting. The BSO207PNTMA1 boasts a maximum power dissipation of 2W and operates across a temperature range of -55°C to 150°C. Key electrical parameters include a gate charge of 23.4nC (max) at 4.5V and an input capacitance (Ciss) of 1013pF (max) at 15V. This component finds application in automotive, industrial automation, and power management systems. Supplied in Tape & Reel (TR) packaging, it utilizes N-channel Metal Oxide technology.
Additional Information
Series: Optimos™RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 1013pF @ 15V |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 5.7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 23.4nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 40µA |
| Supplier Device Package | PG-DSO-8 |
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