BSO204PNTMA1
MOSFET 2P-CH 20V 7A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ BSO204PNTMA1 is a dual P-channel MOSFET array in a PG-DSO-8 package. This surface mount device offers a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C. Featuring a logic level gate, the BSO204PNTMA1 exhibits a maximum Rds On of 30mOhm at 7A and 4.5V Vgs. Key parameters include input capacitance (Ciss) of 1513pF (max) at 15V and gate charge (Qg) of 35.8nC (max) at 4.5V Vgs. The device operates within a temperature range of -55°C to 150°C (TJ) and has a maximum power dissipation of 2W. This component is suitable for applications in automotive and industrial sectors. It is supplied on a Tape & Reel (TR).
Additional Information
Series: Optimos™RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 1513pF @ 15V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 7A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 35.8nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 60µA |
| Supplier Device Package | PG-DSO-8 |
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