BSO203PNTMA1
MOSFET 2P-CH 20V 8.2A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies' OptiMOS™ BSO203PNTMA1 is a dual P-channel MOSFET array designed for high-performance applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 8.2A at 25°C. The device offers a low on-resistance (Rds On) of 21mOhm at 8.2A and 4.5V gate-source voltage (Vgs), making it suitable for efficient power switching.
The BSO203PNTMA1 utilizes MOSFET technology and a logic level gate feature, requiring a Vgs(th) of 1.2V at 100µA. Key parameters include a maximum gate charge (Qg) of 48.6nC at 4.5V and an input capacitance (Ciss) of 2242pF maximum at 15V. With a maximum power dissipation of 2W and an operating temperature range of -55°C to 150°C, it is engineered for reliability. This component is housed in an 8-SOIC package (PG-DSO-8) and is supplied in tape and reel packaging. It finds utility in various sectors including automotive and industrial automation.
Additional Information
Series: Optimos™RoHS Status: RoHS Compliant By ExemptionManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 8.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 2242pF @ 15V |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 8.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 48.6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 100µA |
| Supplier Device Package | PG-DSO-8 |
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