BSO203PHXUMA1
MOSFET 2P-CH 20V 7A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ BSO203PHXUMA1 is a dual P-channel Power MOSFET designed for high-efficiency power switching applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current capability of 7A at 25°C. The BSO203PHXUMA1 offers a low on-resistance (Rds On) of 21mOhm at 8.2A and 4.5V, coupled with a logic-level gate for simplified drive requirements. Key parameters include a gate charge (Qg) of 39nC at 4.5V and an input capacitance (Ciss) of 3750pF at 15V. The component is housed in a PG-DSO-8 package, suitable for surface mounting, with a maximum power dissipation of 1.6W. Operating temperature range is -55°C to 150°C (TJ). This MOSFET array finds application in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.6W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 3750pF @ 15V |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 8.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 100µA |
| Supplier Device Package | PG-DSO-8 |
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