BSO200N03
MOSFET 2N-CH 30V 6.6A 8DSOManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies BSO200N03 is a high-performance OptiMOS™ MOSFET array featuring two N-channel transistors in a PG-DSO-8 package. This 30V device offers a continuous drain current capability of 6.6A at 25°C and a low Rds(on) of 20mOhm at 7.9A and 10V. The logic-level gate drive simplifies interfacing with microcontrollers, and its 8nC maximum gate charge ensures efficient switching. With a maximum power dissipation of 1.4W and an operating temperature range of -55°C to 150°C, this MOSFET array is suitable for applications in automotive, industrial control, and power management systems. The component is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 1010pF @ 15V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 7.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 13µA |
| Supplier Device Package | PG-DSO-8 |
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