BSL806NL6327HTSA1
MOSFET 2N-CH 20V 2.3A TSOP6-6Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies BSL806NL6327HTSA1 is a dual N-channel OptiMOS™ MOSFET array designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 2.3A at 25°C. The device offers a low on-resistance (Rds On) of 57mOhm maximum at 2.3A and a 2.5V gate-source voltage (Vgs). With a logic-level gate drive, it is suitable for low-voltage control circuits. The PG-TSOP6-6 package provides a compact footprint for surface mounting, with a maximum power dissipation of 500mW. Key electrical characteristics include a gate charge (Qg) of 1.7nC maximum at 2.5V and an input capacitance (Ciss) of 259pF maximum at 10V. This MOSFET array is engineered for operation across a wide temperature range from -55°C to 150°C (TJ). It finds application in various industries including automotive, industrial control, and consumer electronics where efficient power management is critical. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 259pF @ 10V |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 2.3A, 2.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.7nC @ 2.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 750mV @ 11µA |
| Supplier Device Package | PG-TSOP6-6 |
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