BSL806NH6327XTSA1
MOSFET 2N-CH 20V 2.3A TSOP6-6Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies OptiMOS™ BSL806NH6327XTSA1 is a dual N-channel enhancement mode Power MOSFET designed for high-efficiency switching applications. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.3A at 25°C. The low on-resistance of 57mOhm (max) at 2.3A and 2.5V gate-source voltage (Vgs) minimizes conduction losses. With a logic level gate feature requiring only 1.8V drive, it is well-suited for battery-powered devices and low-voltage systems. The device offers a maximum power dissipation of 500mW and is supplied in a PG-TSOP6-6 package, suitable for surface mounting. Typical applications include power management in consumer electronics, industrial automation, and automotive systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 259pF @ 10V |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 2.3A, 2.5V |
| Gate Charge (Qg) (Max) @ Vgs | 1.7nC @ 2.5V |
| FET Feature | Logic Level Gate, 1.8V Drive |
| Vgs(th) (Max) @ Id | 750mV @ 11µA |
| Supplier Device Package | PG-TSOP6-6 |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
