BSL308PEL6327HTSA1
MOSFET 2P-CH 30V 2A TSOP6-6Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies OptiMOS™ BSL308PEL6327HTSA1 is a dual P-channel MOSFET array designed for high-efficiency power management applications. This device features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 2A per channel at 25°C. The Rds(on) is specified at a maximum of 80mOhm at 2A and 10V gate-source voltage, indicating low conduction losses. With a logic-level gate feature and a maximum gate charge (Qg) of 5nC at 10V, it facilitates efficient switching with low-voltage drivers. The MOSFET array is packaged in a PG-TSOP6-6 (SOT-23-6 Thin) surface-mount package, suitable for space-constrained designs. Its maximum power dissipation is 500mW, and it operates across a wide temperature range of -55°C to 150°C. This component is commonly found in automotive, industrial control, and consumer electronics sectors where efficient power switching is critical.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2A |
| Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 15V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 11µA |
| Supplier Device Package | PG-TSOP6-6 |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
