BSL308CL6327HTSA1
MOSFET N/P-CH 30V 2.3A TSOP6-6Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ BSL308CL6327HTSA1 is a dual MOSFET array featuring complementary N-channel and P-channel devices. This component offers a 30V drain-to-source voltage rating with continuous drain currents of 2.3A for the N-channel and 2A for the P-channel at 25°C. The N-channel MOSFET exhibits a low Rds(on) of 80mOhm maximum at 2A and 10V Vgs, with a logic-level gate suitable for direct drive from microcontrollers. The P-channel device is rated for 500mW maximum power dissipation. Packaged in a PG-TSOP6-6 (SOT-23-6 Thin) for surface mounting, this array is designed for applications in automotive, industrial control, and power management systems. Key parameters include a typical gate charge (Qg) of 500nC at 10V and input capacitance (Ciss) of 275pF at 15V. It operates across a wide temperature range of -55°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A, 2A |
| Input Capacitance (Ciss) (Max) @ Vds | 275pF @ 15V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 500nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 11µA |
| Supplier Device Package | PG-TSOP6-6 |