BSL306NL6327HTSA1
MOSFET 2N-CH 30V 2.3A TSOP6-6Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ BSL306NL6327HTSA1 is a dual N-channel MOSFET array designed for high-efficiency applications. This component features a 30V drain-source voltage and a continuous drain current of 2.3A at 25°C. With a low gate charge of 1.6nC (max) at 5V, it offers fast switching performance. The Rds(on) is specified at 57mOhm maximum at 2.3A and 10V. The logic-level gate feature enables operation with lower gate drive voltages. This MOSFET array is housed in a PG-TSOP6-6 package, suitable for surface mounting. Key parameters include input capacitance of 275pF (max) at 15V and a maximum power dissipation of 500mW. Operating temperature range is -55°C to 150°C. The BSL306NL6327HTSA1 is utilized in various industries including automotive and consumer electronics.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 275pF @ 15V |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 2.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1.6nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2V @ 11µA |
| Supplier Device Package | PG-TSOP6-6 |
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