BSL306NH6327XTSA1
MOSFET 2N-CH 30V 2.3A TSOP6-6Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ BSL306NH6327XTSA1 is a dual N-channel MOSFET array designed for automotive applications. This device features a 30V drain-source voltage and a continuous drain current capability of 2.3A at 25°C. The BSL306NH6327XTSA1 is constructed with MOSFET technology and offers a low Rds(on) of 57mOhm at 2.3A and 10V. Its logic-level gate drive requires only 4.5V for operation, with a maximum gate charge of 1.6nC at 5V. The component is housed in a PG-TSOP6-6 package, suitable for surface mounting, and has a maximum power dissipation of 500mW. Qualified to AEC-Q101 standards, this MOSFET array is typically utilized in automotive power management and switching applications. The operating temperature range is -55°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 275pF @ 15V |
| Rds On (Max) @ Id, Vgs | 57mOhm @ 2.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1.6nC @ 5V |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Vgs(th) (Max) @ Id | 2V @ 11µA |
| Supplier Device Package | PG-TSOP6-6 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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