BSL215PL6327HTSA1
MOSFET 2P-CH 20V 1.5A TSOP6-6Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ MOSFET Array, part number BSL215PL6327HTSA1, features a dual P-channel configuration with a drain-source voltage of 20V and a continuous drain current of 1.5A. This component offers a low Rds(on) of 150mOhm at 1.5A and 4.5V Vgs. The logic level gate design and a maximum power dissipation of 500mW are supported by a PG-TSOP6-6 package, suitable for surface mounting. Key parameters include a gate charge (Qg) of 3.55nC at 4.5V and input capacitance (Ciss) of 346pF at 15V. Operating temperature ranges from -55°C to 150°C. This device is commonly utilized in power management, battery charging, and general-purpose switching applications across various industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 1.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 346pF @ 15V |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 1.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3.55nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 11µA |
| Supplier Device Package | PG-TSOP6-6 |
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