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BSL214NL6327HTSA1

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BSL214NL6327HTSA1

MOSFET 2N-CH 20V 1.5A TSOP6-6

Manufacturer: Infineon Technologies

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Infineon Technologies' OptiMOS™ BSL214NL6327HTSA1 is a dual N-channel MOSFET array designed for high-efficiency switching applications. This component features a 20V drain-source voltage rating and a continuous drain current capability of 1.5A at 25°C. The device offers a low on-resistance of 140mOhm maximum at 1.5A and 4.5V gate-source voltage, coupled with a logic-level gate for compatibility with lower voltage control signals. With a gate charge of 0.8nC maximum at 5V and an input capacitance of 143pF maximum at 10V, it is optimized for fast switching speeds. The MOSFET array is housed in a PG-TSOP6-6 package, suitable for surface mounting. Its power dissipation is rated at 500mW maximum. This component finds application in consumer electronics, industrial automation, and automotive systems. It operates within an extended temperature range of -55°C to 150°C.

Additional Information

Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSOT-23-6 Thin, TSOT-23-6
Mounting TypeSurface Mount
Configuration2 N-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max500mW
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C1.5A
Input Capacitance (Ciss) (Max) @ Vds143pF @ 10V
Rds On (Max) @ Id, Vgs140mOhm @ 1.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs0.8nC @ 5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.2V @ 3.7µA
Supplier Device PackagePG-TSOP6-6

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