BSL205NL6327HTSA1
MOSFET 2N-CH 20V 2.5A TSOP6-6Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies BSL205NL6327HTSA1 is a dual N-channel OptiMOS™ MOSFET array. This component features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.5A at 25°C. The device is designed with logic-level gate for enhanced control, exhibiting a maximum on-resistance (Rds On) of 50mOhm at 2.5A and 4.5V. Key parameters include a maximum gate charge (Qg) of 3.2nC at 4.5V and input capacitance (Ciss) of 419pF at 10V. The power dissipation is rated at 500mW. The BSL205NL6327HTSA1 is supplied in a PG-TSOP6-6 package, suitable for surface mounting. This MOSFET array is utilized in applications such as power management and switching circuits within the automotive and consumer electronics industries. It operates across a temperature range of -55°C to 150°C.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 419pF @ 10V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 11µA |
| Supplier Device Package | PG-TSOP6-6 |
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