BSL205NH6327XTSA1
MOSFET 2N-CH 20V 2.5A TSOP6-6Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Infineon Technologies OptiMOS™ BSL205NH6327XTSA1 is a 20V, dual N-channel MOSFET array designed for high-performance applications. This automotive-grade component offers a continuous drain current (Id) of 2.5A and a low on-resistance (Rds On) of 50mOhm at 2.5A, 4.5V Vgs. Featuring logic-level gate drive capability, it operates effectively with a 4.5V gate drive. The device is housed in a compact PG-TSOP6-6 package, suitable for surface mounting. Key electrical parameters include a gate charge (Qg) of 3.2nC at 4.5V and input capacitance (Ciss) of 419pF at 10V. With a maximum power dissipation of 500mW and an operating temperature range of -55°C to 150°C, the BSL205NH6327XTSA1 meets AEC-Q101 qualification standards. This MOSFET array is commonly employed in automotive systems and general-purpose power management solutions.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 419pF @ 10V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 3.2nC @ 4.5V |
| FET Feature | Logic Level Gate, 4.5V Drive |
| Vgs(th) (Max) @ Id | 1.2V @ 11µA |
| Supplier Device Package | PG-TSOP6-6 |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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