BSD840N L6327
MOSFET 2N-CH 20V 0.88A SOT363Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ BSD840N-L6327 is a dual 2-channel N-channel MOSFET array. This component features a 20V drain-source breakdown voltage and a continuous drain current of 880mA at 25°C. The low gate threshold voltage of 750mV at 1.6µA and a gate charge of 0.26nC at 2.5V facilitate logic-level gate operation. With a maximum on-resistance of 400mOhm at 880mA and 2.5V, and a maximum power dissipation of 500mW, this device is suitable for applications requiring efficient switching. The BSD840N-L6327 is supplied in a PG-SOT363-PO package, a 6-VSSOP, SC-88, SOT-363, designed for surface mounting. Operating temperature ranges from -55°C to 150°C. This MOSFET array is commonly utilized in consumer electronics and industrial applications.
Additional Information
Series: Optimos™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 880mA |
| Input Capacitance (Ciss) (Max) @ Vds | 78pF @ 10V |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 880mA, 2.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.26nC @ 2.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 750mV @ 1.6µA |
| Supplier Device Package | PG-SOT363-PO |
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