BSD235N L6327
MOSFET 2N-CH 20V 0.95A SOT363Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ 2 BSD235N-L6327 is a 2 N-channel MOSFET array designed for demanding applications. This component features a 20V Drain-Source Voltage (Vdss) and a continuous drain current (Id) of 950mA at 25°C. The device offers a low on-resistance (Rds On) of 350mOhm maximum at 950mA and 4.5V Vgs, along with logic-level gate sensitivity.
The BSD235N-L6327 is housed in a compact PG-SOT363-PO package, supporting surface mount installation. Key electrical parameters include a maximum power dissipation of 500mW, a gate charge (Qg) of 0.32nC at 4.5V, and an input capacitance (Ciss) of 63pF at 10V. This MOSFET array operates within a temperature range of -55°C to 150°C and is qualified to AEC-Q101 standards, making it suitable for automotive and other high-reliability applications.
Additional Information
Series: OptiMOS™ 2RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 950mA |
| Input Capacitance (Ciss) (Max) @ Vds | 63pF @ 10V |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 950mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.32nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 1.6µA |
| Supplier Device Package | PG-SOT363-PO |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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