BSD235C L6327
MOSFET N/P-CH 20V 0.95A SOT363Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ BSD235C-L6327 is a dual MOSFET array featuring N-channel and P-channel configurations. This device offers a Drain-Source Voltage (Vdss) of 20V with continuous drain currents of 950mA for the N-channel and 530mA for the P-channel at 25°C. Designed with logic level gate drive, it exhibits a maximum Rds(On) of 350mOhm at 950mA and 4.5V. The package is PG-SOT363-PO, a 6-VSSOP variant, suitable for surface mount applications on tape and reel. Key parameters include a maximum power dissipation of 500mW, gate charge (Qg) of 0.34nC at 4.5V, and input capacitance (Ciss) of 47pF at 10V. Operating temperature ranges from -55°C to 150°C. This component finds utility in various applications including battery management, power switching, and general-purpose switching within industrial and consumer electronics.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 500mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 950mA, 530mA |
| Input Capacitance (Ciss) (Max) @ Vds | 47pF @ 10V |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 950mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.34nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 1.6µA |
| Supplier Device Package | PG-SOT363-PO |
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