BSD223P L6327
MOSFET 2P-CH 20V 0.39A SOT363Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies OptiMOS™ BSD223P-L6327 is a 20V, dual P-channel MOSFET array in a PG-SOT363-PO package. This surface-mount device features logic-level gate drive and a continuous drain current of 390mA at 25°C. The Rds(On) is specified at 1.2 Ohm maximum at 390mA and 4.5V Vgs. With a gate charge of 0.62nC at 4.5V and input capacitance of 56pF at 15V, this component is suitable for applications requiring efficient switching. Its power dissipation is rated at 250mW. The operating temperature range is -55°C to 150°C. This component finds use in portable electronics and battery management systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 390mA |
| Input Capacitance (Ciss) (Max) @ Vds | 56pF @ 15V |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 390mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.62nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 1.5µA |
| Supplier Device Package | PG-SOT363-PO |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
