BSD223P
MOSFET 2P-CH 20V 0.39A SOT363Manufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ BSD223P is a dual P-channel Power MOSFET designed for efficient switching applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 390mA at 25°C. With a maximum on-resistance (Rds On) of 1.2 Ohm at 390mA and 4.5V Vgs, it offers low conduction losses. The logic level gate ensures compatibility with lower voltage control signals. Key parameters include a gate charge (Qg) of 0.62nC and input capacitance (Ciss) of 56pF. The component is housed in a PG-SOT363-PO package, suitable for surface mounting, and operates across a temperature range of -55°C to 150°C. This MOSFET array is utilized in various industries including consumer electronics and industrial automation.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-VSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 250mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 390mA |
| Input Capacitance (Ciss) (Max) @ Vds | 56pF @ 15V |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 390mA, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 0.62nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.2V @ 1.5µA |
| Supplier Device Package | PG-SOT363-PO |
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