BSC750N10NDGATMA1
MOSFET 2N-CH 100V 3.2A 8TDSONManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ BSC750N10NDGATMA1 is a 100V, 2 N-channel MOSFET array designed for high-efficiency power management applications. This device features a continuous drain current of 3.2A at 25°C and a low on-resistance of 75mOhm maximum at 13A and 10V. The 8-PowerVDFN (PG-TDSON-8-4) package facilitates surface mounting and offers a maximum power dissipation of 26W. Key parameters include a gate charge of 11nC at 10V and an input capacitance of 720pF at 50V. This component is suitable for use in automotive, industrial, and consumer electronics sectors requiring robust switching performance. The operating temperature range is -55°C to 150°C (TJ). This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 26W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 3.2A |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 50V |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 13A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 12µA |
| Supplier Device Package | PG-TDSON-8-4 |
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