BSC072N03LDGATMA1
MOSFET 2N-CH 30V 11.5A 8TDSONManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies OptiMOS™ BSC072N03LDGATMA1 is a 30V, 2 N-Channel MOSFET array designed for high-performance applications. This device features a low on-resistance of 7.2mOhm at 20A and 10V Vgs, coupled with a continuous drain current capability of 11.5A at 25°C. The logic-level gate design simplifies drive requirements, and the low gate charge of 41nC at 10V contributes to efficient switching. With an input capacitance of 3500pF at 15V Vds, it is suitable for demanding power management tasks. The MOSFET array is housed in an 8-PowerVDFN package (PG-TDSON-8-4) for surface mounting and supports a maximum power dissipation of 57W. Operating temperatures range from -55°C to 150°C (TJ). This component finds application in automotive, industrial power, and consumer electronics sectors. Supplied in Tape & Reel (TR).
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerVDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 57W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 11.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 3500pF @ 15V |
| Rds On (Max) @ Id, Vgs | 7.2mOhm @ 20A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TDSON-8-4 |
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