AUIRFN8459TR
MOSFET 2N-CH 40V 50A PQFNManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies AUIRFN8459TR, a HEXFET® series dual N-channel MOSFET array, offers a 40V drain-to-source voltage and 50A continuous drain current at 25°C. This surface mount component, housed in an 8-PowerTDFN PQFN (5x6) package, delivers a maximum power dissipation of 50W. Key electrical characteristics include a low on-resistance of 5.9mOhm at 40A and 10V, a gate charge of 60nC at 10V, and input capacitance of 2250pF at 25V. The device operates within a temperature range of -55°C to 175°C. Its robust design makes it suitable for applications in automotive, industrial power control, and high-power switching systems. The AUIRFN8459TR is supplied on tape and reel.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 50W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 50A |
| Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 25V |
| Rds On (Max) @ Id, Vgs | 5.9mOhm @ 40A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.9V @ 50µA |
| Supplier Device Package | PQFN (5x6) |
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