AUIRFN8458TRXTMA1
MOSFET 2N-CH 40V 43A 8PQFNManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies AUIRFN8458TRXTMA1 is a dual N-channel MOSFET array designed for high-performance applications. This component features a 40V drain-source voltage and a continuous drain current of 43A at 25°C (Tc), with a maximum power dissipation of 34W (Tc). The MOSFET array offers a low on-resistance of 10mOhm at 26A and 10V. Key parameters include a gate charge Qg of 33nC (max) at 10V and an input capacitance Ciss of 2250pF (max) at 25V. The device is housed in an 8-PQFN (5x6) surface mount package and is supplied on tape and reel. Operating temperature range is from -55°C to 175°C (TJ). This MOSFET array is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 34W (Tc) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 2250pF @ 25V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 26A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.9V @ 25µA |
| Supplier Device Package | 8-PQFN (5x6) |
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