AUIRFN8458TR
MOSFET 2N-CH 40V 43A PQFNManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies AUIRFN8458TR is a dual N-channel HEXFET® MOSFET array designed for demanding applications. This component features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 43A at 25°C (Tc), with a maximum power dissipation of 34W (Tc). The low on-resistance of 10mOhm @ 26A, 10V (Rds On) minimizes conduction losses. The device is housed in an 8-PowerTDFN (PQFN 5x6) surface mount package, supplied on tape and reel. Key electrical parameters include a gate charge (Qg) of 33nC @ 10V and input capacitance (Ciss) of 1060pF @ 25V. The operating temperature range is -55°C to 175°C (TJ). This MOSFET array is suitable for use in automotive, industrial power control, and high-efficiency switching applications.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 34W (Tc) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 43A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 1060pF @ 25V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 26A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.9V @ 25µA |
| Supplier Device Package | PQFN (5x6) |
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