AUIRF7343QTR
MOSFET N/P-CH 55V 4.7A 8SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies AUIRFU7343QTR is a HEXFET® MOSFET array featuring N- and P-channel configurations. This component offers a Drain-to-Source Voltage (Vdss) of 55V and a continuous drain current (Id) capability of 4.7A for the N-channel and 3.4A for the P-channel at 25°C. Designed with a logic level gate, it has a maximum power dissipation of 2W and an On-Resistance (Rds On) of 50mOhm at 4.7A, 10V. The input capacitance (Ciss) is a maximum of 740pF at 25V, with a gate charge (Qg) of 36nC at 10V. This device operates within a temperature range of -55°C to 150°C. The AUIRFU7343QTR is supplied in an 8-SOIC package, presented on tape and reel. It finds application in automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 4.7A, 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 740pF @ 25V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 4.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-SOIC |
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