AUIRF7342Q
MOSFET 2P-CH 55V 3.4A 8SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® AUIRFU7342Q is a dual P-channel MOSFET array designed for automotive applications. This component features a Drain-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 3.4A at 25°C. The device offers a low Rds(on) of 105mOhm maximum at 3.4A and 10V Vgs, with a logic level gate for efficient drive. It is packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, supporting a maximum power dissipation of 2W. Key electrical parameters include a Gate Charge (Qg) of 38nC maximum at 10V and an input capacitance (Ciss) of 690pF maximum at 25V. The operating temperature range is -55°C to 150°C (TJ). This MOSFET array is suitable for power management and switching applications within the automotive sector.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 690pF @ 25V |
| Rds On (Max) @ Id, Vgs | 105mOhm @ 3.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 38nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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