AUIRF7341QTR
MOSFET 2N-CH 55V 5.1A 8SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® AUIRF7341QTR is a dual N-channel MOSFET array designed for automotive applications, qualified to AEC-Q101. This component features a 55V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 5.1A at 25°C. The device offers a low on-resistance (Rds On) of 50mOhm at 5.1A and 10V Vgs, along with a logic level gate for enhanced driving flexibility. Key parameters include a maximum power dissipation of 2.4W and an input capacitance (Ciss) of 780pF at 25V. The AUIRF7341QTR is housed in an 8-SOIC package suitable for surface mounting and operates across a wide temperature range of -55°C to 175°C. It is supplied in tape and reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.4W |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 25V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 5.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
| Grade | Automotive |
| Qualification | AEC-Q101 |
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