AUIRF7341Q
MOSFET 2N-CH 55V 5.1A 8SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies AUIRFR7341Q HEXFET® is a dual N-channel MOSFET array in an 8-SOIC package suitable for high-density applications. This device features a Drain-to-Source Voltage (Vdss) of 55V and a continuous Drain Current (Id) of 5.1A at 25°C, with a low On-Resistance (Rds On) of 50mOhm at 5.1A and 10V. The logic-level gate technology simplifies drive requirements, and the component offers a maximum power dissipation of 2.4W. With a gate charge (Qg) of 44nC at 10V and input capacitance (Ciss) of 780pF at 25V, it is designed for efficient switching. The AUIRFR7341Q is commonly employed in automotive and industrial power management systems. It operates within an extended temperature range of -55°C to 175°C (TJ) and is supplied in a tube.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.4W |
| Drain to Source Voltage (Vdss) | 55V |
| Current - Continuous Drain (Id) @ 25°C | 5.1A |
| Input Capacitance (Ciss) (Max) @ Vds | 780pF @ 25V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 5.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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