AUIRF7319QTR
MOSFET N/P-CH 30V 6.5A 8SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® MOSFET N/P-CH 30V 6.5A 8SOIC, part number AUIRF7319QTR, is a power MOSFET array featuring both N-channel and P-channel devices within a single 8-SOIC package. This component offers a continuous drain current of 6.5A for the N-channel and 4.9A for the P-channel, with a maximum drain-to-source voltage of 30V. The logic level gate feature simplifies drive requirements. Key electrical parameters include a maximum Rds(On) of 29mOhm at 5.8A and 10V, and a gate charge (Qg) of 33nC at 10V. Input capacitance (Ciss) is rated at 650pF at 25V. Designed for surface mounting, this device supports a maximum power dissipation of 2W and operates across a temperature range of -55°C to 150°C. The AUIRF7319QTR is commonly utilized in automotive and industrial power management applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A, 4.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 25V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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