AUIRF7319Q
MOSFET N/P-CH 30V 6.5A 8SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® AUIRFU7319Q is a N- and P-channel MOSFET array designed for high-efficiency power switching applications. This component offers a 30V drain-to-source voltage rating and continuous drain currents of up to 6.5A for the N-channel and 4.9A for the P-channel. Key features include a logic level gate, enabling operation with lower gate drive voltages, and a low on-resistance of 29mOhm maximum at 5.8A and 10V. The AUIRFU7319Q is housed in an 8-SOIC package with a maximum power dissipation of 2W. Typical applications for this device include automotive power management, battery charging circuits, and general-purpose power control systems. The operating temperature range is -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.5A, 4.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 650pF @ 25V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 5.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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