AUIRF7316QTR
MOSFET 2P-CH 30V 8SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® AUIRFI7316QTR is a dual P-channel MOSFET array designed for demanding applications. This surface mount component features a 30V drain-to-source voltage (Vdss) and a low on-resistance of 58mOhm maximum at 4.9A and 10V Vgs. The logic level gate enhances drivability, with a gate charge (Qg) of 34nC maximum at 10V and input capacitance (Ciss) of 710pF maximum at 25V. Packaged in an 8-SOIC with a maximum power dissipation of 2W, this device operates across a temperature range of -55°C to 150°C (TJ). The AUIRFI7316QTR is suitable for automotive and industrial power management systems.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 25V |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 4.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 34nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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