AUIRF7313QTR
MOSFET 2N-CH 30V 6.9A 8SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies AUIRF7313QTR is a dual N-channel HEXFET® power MOSFET array in an 8-SOIC package, designed for high-efficiency switching applications. This component features a continuous drain current capability of 6.9A at 25°C with a drain-to-source voltage (Vdss) of 30V. The low on-resistance of 29mOhm at 6.9A and 10V gate-source voltage ensures minimal power dissipation. Optimized for logic-level gate drive, it presents a maximum gate charge (Qg) of 33nC at 10V and an input capacitance (Ciss) of 755pF at 25V. With a maximum power dissipation of 2.4W and an operating temperature range of -55°C to 175°C, this MOSFET array is suitable for automotive, industrial, and power management systems. The AUIRF7313QTR is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: HEXFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 755pF @ 25V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 6.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
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