AUIRF7313Q
MOSFET 2N-CH 30V 6.9A 8SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Infineon Technologies HEXFET® AUIRF7313Q is a dual N-channel MOSFET array designed for automotive applications. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 6.9A at 25°C. The AUIRF7313Q offers a low on-resistance (Rds On) of 29mOhm at 6.9A and 10V Vgs, and a logic level gate for compatibility with lower voltage control signals. With a maximum power dissipation of 2.4W and an operating temperature range of -55°C to 175°C (TJ), it is built for demanding environments. The 8-SOIC package facilitates efficient surface mounting. Key parameters include a gate charge (Qg) of 33nC at 10V and input capacitance (Ciss) of 755pF at 25V. This component is commonly utilized in automotive power management systems and motor control circuits.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6.9A |
| Input Capacitance (Ciss) (Max) @ Vds | 755pF @ 25V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 6.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 33nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-SOIC |
Request a Quote
Clients Also Buy
IRLML6401TRPBF
MOSFET P-CH 12V 4.3A SOT23
IRLML6302TRPBF
MOSFET P-CH 20V 780MA SOT23
IRLML6402TRPBF
MOSFET P-CH 20V 3.7A SOT23
