AUIRF7304Q
MOSFET 2P-CH 20V 4.3A 8SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® AUIRFI7304Q is a 2 P-channel MOSFET array featuring a 20V drain-to-source voltage (Vdss). This surface-mount device, packaged in an 8-SOIC configuration, offers a continuous drain current (Id) of 4.3A at 25°C and a maximum power dissipation of 2W. The device exhibits a low Rds On of 90mOhm at 2.2A and 4.5V, along with a logic level gate feature. Key parameters include a gate charge (Qg) of 22nC (max) at 4.5V and input capacitance (Ciss) of 610pF (max) at 15V. The threshold voltage (Vgs(th)) is 1.5V (max) at 250µA. This component is suitable for automotive applications. The AUIRFI7304Q is supplied in tube packaging and operates within a temperature range of -55°C to 150°C.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 15V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 2.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-SOIC |
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