AUIRF7303QTR
MOSFET 2N-CH 30V 5.3A 8SOICManufacturer: Infineon Technologies
Categories: FET, MOSFET Arrays
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Infineon Technologies HEXFET® AUIRFU7303QTR is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This automotive-grade component features a 30V Drain-Source Voltage (Vdss) and a continuous Drain Current (Id) of 5.3A at 25°C. The low on-resistance of 50mOhm at 2.7A, 10V (Rds On) minimizes conduction losses. This device incorporates Logic Level Gate functionality, enabling control with lower gate drive voltages. With a maximum power dissipation of 2.4W and a gate charge of 21nC at 10V, it offers robust performance. The 8-SOIC package, supplied on tape and reel, is suitable for surface mounting. Key electrical parameters include an input capacitance (Ciss) of 515pF at 25V and a threshold voltage (Vgs(th)) of 3V at 100µA. Operating temperature range is -55°C to 175°C (TJ). This component finds application in automotive power management and industrial control systems.
Additional Information
Series: HEXFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5.3A |
| Input Capacitance (Ciss) (Max) @ Vds | 515pF @ 25V |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 2.7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 100µA |
| Supplier Device Package | 8-SOIC |
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